Please use this identifier to cite or link to this item:
|Title:||A new fabrication method for low stress PECVD - SiNx layers|
|Citation:||Ong, P.L., Wei, J., Tay, F.E.H., Iliescu, C. (2006-04-01). A new fabrication method for low stress PECVD - SiNx layers. Journal of Physics: Conference Series 34 (1) : 764-769. ScholarBank@NUS Repository. https://doi.org/10.1088/1742-6596/34/1/126|
|Abstract:||This paper presents a new method of depositing low stress silicon nitride (SiNx) with high deposition rate using a plasma-enhanced chemical vapour deposition (PECVD) system (STS, Multiplex Pro-CVD). By increasing the operating power of the PECVD system at the high frequency mode (13.56MHz), the deposition rate also increases while that the level of intrinsic stress within the SiNx film decreases. The relationships between some of the key deposition parameters of the experiment such as chamber pressure, silane (SiH4), ammonia (NH3) and nitrogen (N2) flow rates and the two important response variables namely the level of intrinsic stress and deposition rate are established within this investigation. © 2006 IOP Publishing Ltd.|
|Source Title:||Journal of Physics: Conference Series|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 12, 2018
WEB OF SCIENCETM
checked on Oct 17, 2018
checked on Nov 16, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.