Please use this identifier to cite or link to this item: https://doi.org/10.1088/1742-6596/34/1/126
Title: A new fabrication method for low stress PECVD - SiNx layers
Authors: Ong, P.L.
Wei, J.
Tay, F.E.H. 
Iliescu, C.
Issue Date: 1-Apr-2006
Citation: Ong, P.L., Wei, J., Tay, F.E.H., Iliescu, C. (2006-04-01). A new fabrication method for low stress PECVD - SiNx layers. Journal of Physics: Conference Series 34 (1) : 764-769. ScholarBank@NUS Repository. https://doi.org/10.1088/1742-6596/34/1/126
Abstract: This paper presents a new method of depositing low stress silicon nitride (SiNx) with high deposition rate using a plasma-enhanced chemical vapour deposition (PECVD) system (STS, Multiplex Pro-CVD). By increasing the operating power of the PECVD system at the high frequency mode (13.56MHz), the deposition rate also increases while that the level of intrinsic stress within the SiNx film decreases. The relationships between some of the key deposition parameters of the experiment such as chamber pressure, silane (SiH4), ammonia (NH3) and nitrogen (N2) flow rates and the two important response variables namely the level of intrinsic stress and deposition rate are established within this investigation. © 2006 IOP Publishing Ltd.
Source Title: Journal of Physics: Conference Series
URI: http://scholarbank.nus.edu.sg/handle/10635/84796
ISSN: 17426588
DOI: 10.1088/1742-6596/34/1/126
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