Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84351
Title: Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics
Authors: Huang, C.H.
Yang, M.Y.
Chin, A.
Chen, W.J.
Zhu, C.X. 
Cho, B.J. 
Li, M.-F. 
Kwong, D.L.
Issue Date: 2003
Source: Huang, C.H.,Yang, M.Y.,Chin, A.,Chen, W.J.,Zhu, C.X.,Cho, B.J.,Li, M.-F.,Kwong, D.L. (2003). Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics. Digest of Technical Papers - Symposium on VLSI Technology : 119-120. ScholarBank@NUS Repository.
Abstract: We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al2O3 gate dielectrics [EOT=1.7nm]. Compared to control Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al2O3/GOI devices exhibit 1.3X enhanced hole mobility over the SiO2/Si universal hole mobility at Eeff of IMV/cm.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84351
ISSN: 07431562
Appears in Collections:Staff Publications

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