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|Title:||Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics|
|Citation:||Huang, C.H.,Yang, M.Y.,Chin, A.,Chen, W.J.,Zhu, C.X.,Cho, B.J.,Li, M.-F.,Kwong, D.L. (2003). Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics. Digest of Technical Papers - Symposium on VLSI Technology : 119-120. ScholarBank@NUS Repository.|
|Abstract:||We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al2O3 gate dielectrics [EOT=1.7nm]. Compared to control Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al2O3/GOI devices exhibit 1.3X enhanced hole mobility over the SiO2/Si universal hole mobility at Eeff of IMV/cm.|
|Source Title:||Digest of Technical Papers - Symposium on VLSI Technology|
|Appears in Collections:||Staff Publications|
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