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https://scholarbank.nus.edu.sg/handle/10635/84351
| Title: | Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics | Authors: | Huang, C.H. Yang, M.Y. Chin, A. Chen, W.J. Zhu, C.X. Cho, B.J. Li, M.-F. Kwong, D.L. |
Issue Date: | 2003 | Citation: | Huang, C.H.,Yang, M.Y.,Chin, A.,Chen, W.J.,Zhu, C.X.,Cho, B.J.,Li, M.-F.,Kwong, D.L. (2003). Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics. Digest of Technical Papers - Symposium on VLSI Technology : 119-120. ScholarBank@NUS Repository. | Abstract: | We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al2O3 gate dielectrics [EOT=1.7nm]. Compared to control Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al2O3/GOI devices exhibit 1.3X enhanced hole mobility over the SiO2/Si universal hole mobility at Eeff of IMV/cm. | Source Title: | Digest of Technical Papers - Symposium on VLSI Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/84351 | ISSN: | 07431562 |
| Appears in Collections: | Staff Publications |
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