Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84342
Title: Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology
Authors: Gong, X.
Han, G. 
Su, S.
Cheng, R. 
Guo, P.
Bai, F.
Yang, Y.
Zhou, Q. 
Liu, B.
Goh, K.H.
Zhang, G.
Xue, C.
Cheng, B.
Yeo, Y.-C. 
Issue Date: 2013
Source: Gong, X.,Han, G.,Su, S.,Cheng, R.,Guo, P.,Bai, F.,Yang, Y.,Zhou, Q.,Liu, B.,Goh, K.H.,Zhang, G.,Xue, C.,Cheng, B.,Yeo, Y.-C. (2013). Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology. Digest of Technical Papers - Symposium on VLSI Technology : T34-T35. ScholarBank@NUS Repository.
Abstract: We report the first demonstration of gate-all-around (GAA) GeSn nanowire (NW) pFETs. The uniaxially compressive strained GeSn NW with a width of 50 nm and a height of 35 nm was fabricated using a CMOS compatible top-down approach. The GeSn GAA NW pFETs with the shortest reported channel length LCH down to 100 nm were realized, and the devices achieve a record high peak intrinsic transconductance Gm,int of 573 μS/μm at V DS of -1.0 V for GeSn pFETs. © 2013 JSAP.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84342
ISBN: 9784863483477
ISSN: 07431562
Appears in Collections:Staff Publications

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