Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/84342
| Title: | Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology | Authors: | Gong, X. Han, G. Su, S. Cheng, R. Guo, P. Bai, F. Yang, Y. Zhou, Q. Liu, B. Goh, K.H. Zhang, G. Xue, C. Cheng, B. Yeo, Y.-C. |
Issue Date: | 2013 | Citation: | Gong, X.,Han, G.,Su, S.,Cheng, R.,Guo, P.,Bai, F.,Yang, Y.,Zhou, Q.,Liu, B.,Goh, K.H.,Zhang, G.,Xue, C.,Cheng, B.,Yeo, Y.-C. (2013). Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology. Digest of Technical Papers - Symposium on VLSI Technology : T34-T35. ScholarBank@NUS Repository. | Abstract: | We report the first demonstration of gate-all-around (GAA) GeSn nanowire (NW) pFETs. The uniaxially compressive strained GeSn NW with a width of 50 nm and a height of 35 nm was fabricated using a CMOS compatible top-down approach. The GeSn GAA NW pFETs with the shortest reported channel length LCH down to 100 nm were realized, and the devices achieve a record high peak intrinsic transconductance Gm,int of 573 μS/μm at V DS of -1.0 V for GeSn pFETs. © 2013 JSAP. | Source Title: | Digest of Technical Papers - Symposium on VLSI Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/84342 | ISBN: | 9784863483477 | ISSN: | 07431562 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.