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|Title:||Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology|
|Citation:||Gong, X.,Han, G.,Su, S.,Cheng, R.,Guo, P.,Bai, F.,Yang, Y.,Zhou, Q.,Liu, B.,Goh, K.H.,Zhang, G.,Xue, C.,Cheng, B.,Yeo, Y.-C. (2013). Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology. Digest of Technical Papers - Symposium on VLSI Technology : T34-T35. ScholarBank@NUS Repository.|
|Abstract:||We report the first demonstration of gate-all-around (GAA) GeSn nanowire (NW) pFETs. The uniaxially compressive strained GeSn NW with a width of 50 nm and a height of 35 nm was fabricated using a CMOS compatible top-down approach. The GeSn GAA NW pFETs with the shortest reported channel length LCH down to 100 nm were realized, and the devices achieve a record high peak intrinsic transconductance Gm,int of 573 μS/μm at V DS of -1.0 V for GeSn pFETs. © 2013 JSAP.|
|Source Title:||Digest of Technical Papers - Symposium on VLSI Technology|
|Appears in Collections:||Staff Publications|
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