Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.proeng.2010.09.309
Title: Ultrasensitive nanowire pressure sensor makes its debut
Authors: Soon, B.W.
Neuzil, P.
Wong, C.C.
Reboud, J.
Feng, H.H.
Lee, C. 
Keywords: Giant piezoresistivity
NEMS
Pressure sensor
Silicon nanowire
Issue Date: 2010
Source: Soon, B.W., Neuzil, P., Wong, C.C., Reboud, J., Feng, H.H., Lee, C. (2010). Ultrasensitive nanowire pressure sensor makes its debut. Procedia Engineering 5 : 1127-1130. ScholarBank@NUS Repository. https://doi.org/10.1016/j.proeng.2010.09.309
Abstract: A membrane pressure sensor with embedded piezoresistive silicon nanowires (NW) has been demonstrated to have an ultrasensitive piezoresistive response of (ΔR/R)/ΔP of 13 Pa-1. This was achieved through the effective tuning of the transverse electric field across the NW. The fabrication of the sensor is fully based on CMOS compatible technique. P-type (110) oriented NWs with a square cross-section of 100 nm were fabricated on silicon-on-insulator (SOI) wafers, acting as the sensing elements. The NWs' exceptional properties and minute size will enable further shrinking of footprint of pressure sensors and other NEMS sensors with increased sensitivity, opening a way to new applications like implantable medical devices.
Source Title: Procedia Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/84335
ISSN: 18777058
DOI: 10.1016/j.proeng.2010.09.309
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