Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.532649
Title: Ultrafast phase transitions in Ge1Sb2Te4 films induced by femtosecond laser beam
Authors: Wang, Q.F.
Shi, L.P.
Wang, Z.B.
Lan, B.
Yi, K.J.
Hong, M.H.
Chong, T.C. 
Issue Date: 2003
Source: Wang, Q.F., Shi, L.P., Wang, Z.B., Lan, B., Yi, K.J., Hong, M.H., Chong, T.C. (2003). Ultrafast phase transitions in Ge1Sb2Te4 films induced by femtosecond laser beam. Proceedings of SPIE - The International Society for Optical Engineering 5069 : 165-172. ScholarBank@NUS Repository. https://doi.org/10.1117/12.532649
Abstract: Ultrafast phase transitions triggered by single femtosecond laser pulse in Ge1Sb2Te4 films were investigated. By proper control of the film thickness, ultrafast crystalline and amorphous phase transformations have been achieved in Ge1Sb2Te 4 films. These ultrafast phase transitions were confirmed by reflectivity change and X-ray diffraction measurement.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/84333
ISSN: 0277786X
DOI: 10.1117/12.532649
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