Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSIT.2012.6242480
Title: Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT
Authors: Gong, X.
Su, S.
Liu, B.
Wang, L.
Wang, W.
Yang, Y.
Kong, E.
Cheng, B.
Han, G. 
Yeo, Y.-C. 
Issue Date: 2012
Citation: Gong, X.,Su, S.,Liu, B.,Wang, L.,Wang, W.,Yang, Y.,Kong, E.,Cheng, B.,Han, G.,Yeo, Y.-C. (2012). Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT. Digest of Technical Papers - Symposium on VLSI Technology : 99-100. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2012.6242480
Abstract: We report a novel common gate stack solution for Ge 1-xSn x P-MOSFET and In 0.7Ga 0.3As N-MOSFET, featuring sub-400°C Si 2H 6 passivation, sub-1.3 nm EOT, and single TaN metal gate. Symmetric V TH, high performance, low gate leakage, negligible hysteresis, and excellent reliability were realized. Using this gate stack, the world's first GeSn short-channel device with gate length L G down to 250 nm was realized. Drive current of more than 1000 μA/μm was achieved, with peak intrinsic transconductance of ∼ 465 μS/μm at V DS of -1.1 V. © 2012 IEEE.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84315
ISBN: 9781467308458
ISSN: 07431562
DOI: 10.1109/VLSIT.2012.6242480
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

16
checked on Dec 9, 2018

Page view(s)

26
checked on Dec 15, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.