Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT

Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSIT.2012.6242480

Title:	Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT
Authors:	Gong, X. Su, S. Liu, B. Wang, L. Wang, W. Yang, Y. Kong, E. Cheng, B. Han, G. Yeo, Y.-C.
Issue Date:	2012
Citation:	Gong, X.,Su, S.,Liu, B.,Wang, L.,Wang, W.,Yang, Y.,Kong, E.,Cheng, B.,Han, G.,Yeo, Y.-C. (2012). Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT. Digest of Technical Papers - Symposium on VLSI Technology : 99-100. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2012.6242480
Abstract:	We report a novel common gate stack solution for Ge 1-xSn x P-MOSFET and In 0.7Ga 0.3As N-MOSFET, featuring sub-400°C Si 2H 6 passivation, sub-1.3 nm EOT, and single TaN metal gate. Symmetric V TH, high performance, low gate leakage, negligible hysteresis, and excellent reliability were realized. Using this gate stack, the world's first GeSn short-channel device with gate length L G down to 250 nm was realized. Drive current of more than 1000 μA/μm was achieved, with peak intrinsic transconductance of ∼ 465 μS/μm at V DS of -1.1 V. © 2012 IEEE.
Source Title:	Digest of Technical Papers - Symposium on VLSI Technology
URI:	http://scholarbank.nus.edu.sg/handle/10635/84315
ISBN:	9781467308458
ISSN:	07431562
DOI:	10.1109/VLSIT.2012.6242480
Appears in Collections:	Staff Publications

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