Please use this identifier to cite or link to this item: https://doi.org/10.1149/05302.0065ecst
Title: Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact
Authors: Bera, M.K.
Liu, Y.
Kyaw, L.M.
Ngoo, Y.J.
Chor, E.F. 
Issue Date: 2013
Source: Bera, M.K., Liu, Y., Kyaw, L.M., Ngoo, Y.J., Chor, E.F. (2013). Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contact. ECS Transactions 53 (2) : 65-74. ScholarBank@NUS Repository. https://doi.org/10.1149/05302.0065ecst
Abstract: Thickness dependent electrical properties of Y2O3 gate dielectric based metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on In0.18Al0.82N/GaN-on-Si are reported. A Au-free Ti/Al/Ni/W (25/200/40/50 nm) ohmic contact compatible for Si fab industry has been developed, which demonstrates a contact resistance of 0.56 Ω.mm and a specific contact resistivity of 1.45×10-6 Ω.cm2, obtained after annealing at 900°C in vacuum for 60 sec. A positive shift in threshold voltage with decreasing Y2O 3 film thickness is demonstrated while an improved MOSHEMTs transconductance and maximum saturation drain current have been obtained for thicker one. Besides, Y2O3 film thickness and annealing dependent interfacial properties have been investigated. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/84303
ISBN: 9781607683759
ISSN: 19385862
DOI: 10.1149/05302.0065ecst
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Apr 10, 2018

WEB OF SCIENCETM
Citations

1
checked on Apr 10, 2018

Page view(s)

31
checked on Mar 12, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.