Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire

Abstract

We present a successful synthesis of single crystalline homogeneous Si 1-xGex nanowires (diameter: 7 - 52nm) via vaporliquid-solid mechanism. Results show that quality, density, and growth rate of Si1-xGex nanowires are greatly affected by the growth temperature and the single crystalline Si1-xGex nanowires without amorphous sheath layer can be obtained at optimized growth temperature. Control of the amount of Ge in nanowire was obtained with different GeH 4 gas flow rates. Using backgated field effect transistor integrated with HfO2 gate dielectric, TaN/Ta metal gate and Pd source/drain electrode, Si1-xGex nanowire transistor exhibits p-MOS operation with Ion/Ioff ∼ 104, sub-threshold swing of 97 mV/dec. © 2007 IEEE.