Study of thermal-anneal-induced rearrangement of N-bonding configurations in GalnNAs/GaAs quantum well

Abstract

Blueshifts of photoluminescence (PL) peak wavelength from GaInNAs/GaAs quantum well (QW) at various annealing temperatures have been studied. Our results indicate that as-grown GaInNAs/GaAs QW sample has N-Ga 3In1 phase, which changes to a mixture of N-Ga 3In1 and N-Ga2In2 after annealing. The activation energy characterized for short range order is 2.38 eV, which is smaller than that for the diffusion process (3.196 eV). This indicates that the short range order is the dominant mechanism for PL blueshift at relatively low annealing temperature and for short time annealing.