Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2004.04.083
Title: Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (1 1 1)
Authors: Zang, K.Y.
Wang, L.S.
Chua, S.J. 
Thompson, C.V.
Keywords: A1. Atomic force microscopy
A1. Transmission electron microscopy
B1. AlN
B1. GaN
Issue Date: 1-Aug-2004
Citation: Zang, K.Y., Wang, L.S., Chua, S.J., Thompson, C.V. (2004-08-01). Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (1 1 1). Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 515-520. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.083
Abstract: AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers on Si (111) substrates grown by metalorganic chemical vapor deposition with trimethylaluminum (TMA) pretreatments have been studied using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The AFM results show that with TMA pretreatment, AlN nucleates under a pseudo-two dimensional growth mode due to the enhanced lateral growth rate and improved wetting property of AlN on silicon. In addition, with TMA pretreatment, absence of amorphous SiNx layer at the interface demonstrates good crystalline quality. Transmission electron diffraction patterns reveal epitaxial crystallographic orientation: AlN[0001]
Si[111] and AlN[112̄0]
Si[110]. High-resolution TEM measurements also indicate a 5:4 lattice matching relationship for AlN and Si along the Si [110] direction. © 2004 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/84238
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2004.04.083
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