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|Title:||Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (1 1 1)|
|Keywords:||A1. Atomic force microscopy|
A1. Transmission electron microscopy
|Citation:||Zang, K.Y., Wang, L.S., Chua, S.J., Thompson, C.V. (2004-08-01). Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (1 1 1). Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 515-520. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.083|
|Abstract:||AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers on Si (111) substrates grown by metalorganic chemical vapor deposition with trimethylaluminum (TMA) pretreatments have been studied using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The AFM results show that with TMA pretreatment, AlN nucleates under a pseudo-two dimensional growth mode due to the enhanced lateral growth rate and improved wetting property of AlN on silicon. In addition, with TMA pretreatment, absence of amorphous SiNx layer at the interface demonstrates good crystalline quality. Transmission electron diffraction patterns reveal epitaxial crystallographic orientation: AlN|
Si and AlN[112̄0]
Si. High-resolution TEM measurements also indicate a 5:4 lattice matching relationship for AlN and Si along the Si  direction. © 2004 Elsevier B.V. All rights reserved.
|Source Title:||Journal of Crystal Growth|
|Appears in Collections:||Staff Publications|
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