Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84237
Title: Stress-induced leakage current in thin oxides under high-field impulse stressing
Authors: Tan, Y.N.
Chim, W.K. 
Lim, P.S.
Issue Date: 2001
Citation: Tan, Y.N.,Chim, W.K.,Lim, P.S. (2001). Stress-induced leakage current in thin oxides under high-field impulse stressing. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 228-233. ScholarBank@NUS Repository.
Abstract: Stress-induced leakage current, or SILC, decreases when the time-between-pulses (Tbp) of an ac-pulse waveform is increased. The amount of SILC reduction generally decreases for the same increase in Tbp, with increasing stress voltage magnitude and stress pulse width. A model developed to describe the trap generation and relaxation processes occuring during transient high-field stress from unipolar and bipolar pulse waveforms is presented in this paper.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/84237
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