Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2006.346814
Title: Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner
Authors: Wang, G.H.
Toh, E.-H.
Toh
Hoe, K.M.
Tripathy, S.
Balakurnar, S.
Lo, G.-Q.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2006
Source: Wang, G.H.,Toh, E.-H.,Toh,Hoe, K.M.,Tripathy, S.,Balakurnar, S.,Lo, G.-Q.,Samudra, G.,Yeo, Y.-C. (2006). Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2006.346814
Abstract: A novel strained-SiGe n-channel field-effect transistor (nFET) featuring silicon-carbon (Si0.99C1.01) source/drain (S/D) stressors and tensile stress nitride (SiN) liner is demonstrated for the first time. The silicon-carbon Si1-yCy material is pseudomorphically grown by selective epitaxy and the carbon mole fraction y incorporated is 1%. Si 0.99C0.01 S/D was employed to induce uniaxial tensile strain in the SiGe channel, leading to enhancement in electron mobility. Devices with gate length LG down to 50 nm were fabricated. Up to 55% higher saturation drive current Id,sat was achieved in the strained-SGOI nFETs over control devices. In addition, the incorporation of a tensile stress SiN liner improves Id,sat by an additional 15%.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/84235
ISBN: 1424404398
ISSN: 01631918
DOI: 10.1109/IEDM.2006.346814
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