Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/84232

Title:	Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
Authors:	Chin, H.-C. Xiao, G. Xinke, L. Zhe, L. Yeo, Y.-C.
Issue Date:	2009
Citation:	Chin, H.-C.,Xiao, G.,Xinke, L.,Zhe, L.,Yeo, Y.-C. (2009). Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering. Digest of Technical Papers - Symposium on VLSI Technology : 244-245. ScholarBank@NUS Repository.
Abstract:	We report the first demonstration of strained III-V n-MOSFETs with lattice-mismatched source/drain (S/D) stressors. Lateral tensile strain was induced by In0.4Ga0.6As S/D on the In 0.53Ga0.47As channel. In-situ doping was incorporated as well for series resistance reduction. We also integrated SiH4+NH 3 passivation for reduction of interface state density on In 0.53Ga0.47As for the first time.
Source Title:	Digest of Technical Papers - Symposium on VLSI Technology
URI:	http://scholarbank.nus.edu.sg/handle/10635/84232
ISBN:	9784863480094
ISSN:	07431562
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check