Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84232
Title: Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
Authors: Chin, H.-C.
Xiao, G.
Xinke, L.
Zhe, L.
Yeo, Y.-C. 
Issue Date: 2009
Source: Chin, H.-C.,Xiao, G.,Xinke, L.,Zhe, L.,Yeo, Y.-C. (2009). Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering. Digest of Technical Papers - Symposium on VLSI Technology : 244-245. ScholarBank@NUS Repository.
Abstract: We report the first demonstration of strained III-V n-MOSFETs with lattice-mismatched source/drain (S/D) stressors. Lateral tensile strain was induced by In0.4Ga0.6As S/D on the In 0.53Ga0.47As channel. In-situ doping was incorporated as well for series resistance reduction. We also integrated SiH4+NH 3 passivation for reduction of interface state density on In 0.53Ga0.47As for the first time.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84232
ISBN: 9784863480094
ISSN: 07431562
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

33
checked on Feb 22, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.