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|Title:||Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering|
|Source:||Chin, H.-C.,Xiao, G.,Xinke, L.,Zhe, L.,Yeo, Y.-C. (2009). Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering. Digest of Technical Papers - Symposium on VLSI Technology : 244-245. ScholarBank@NUS Repository.|
|Abstract:||We report the first demonstration of strained III-V n-MOSFETs with lattice-mismatched source/drain (S/D) stressors. Lateral tensile strain was induced by In0.4Ga0.6As S/D on the In 0.53Ga0.47As channel. In-situ doping was incorporated as well for series resistance reduction. We also integrated SiH4+NH 3 passivation for reduction of interface state density on In 0.53Ga0.47As for the first time.|
|Source Title:||Digest of Technical Papers - Symposium on VLSI Technology|
|Appears in Collections:||Staff Publications|
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