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|Title:||Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors|
|Citation:||Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008). Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors. ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference : 151-154. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2007.4430901|
|Abstract:||By removing the SiN gate spacers in n-channel FinFETs with Silicon-Carbon (SiC) Source and Drain (S/D) stressors, the mechanical stress equilibrium is perturbed. Higher tensile channel stress can be achieved, after the transistor structure attains mechanical equilibrium once again after spacer removal. This stress increase results in up to ∼15 % further IDsat enhancement over strained SiC S/D FinFETs with spacers intact. Peak Gm is enhanced by ∼33%. © 2007 IEEE.|
|Source Title:||ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference|
|Appears in Collections:||Staff Publications|
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