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|Title:||STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology|
|Citation:||Phua, W.H.T., Ang, D.S., Ling, C.H., Chui, K.J. (2005). STI-induced damage and hot-carrier reliability in the narrow width short channel NMOSFET fabricated using global strained-Si technology. Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference 2005 : 533-536. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDER.2005.1546702|
|Abstract:||The width dependence of threshold voltage (Vt) in the strained-Si NMOSFET relative to that of the control bulk Si device is examined. The contrasting behavior of Vt, for decreasing channel width (W drawn) at a given channel length (Ldrawn), could be ascribed to the increased concentration of the channel dopant at the regions near the STI (shallow trench isolation)/gate edge of the strained device. Dopant enhancement is attributed to the abundance of interstitial defect sites located in both the strained-Si and the SiGe layer, due to the lattice strain arising from the STI process. Hot-carrier degradation is found to be marginally higher in the narrow-width strained device. © 2005 IEEE.|
|Source Title:||Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference|
|Appears in Collections:||Staff Publications|
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