Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84197
Title: Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant
Authors: Sinha, M.
Lee, R.T.P. 
Devi, S.N.
Lo, G.-Q.
Eng, F.C. 
Yeo, Y.-C. 
Issue Date: 2009
Citation: Sinha, M.,Lee, R.T.P.,Devi, S.N.,Lo, G.-Q.,Eng, F.C.,Yeo, Y.-C. (2009). Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant. Digest of Technical Papers - Symposium on VLSI Technology : 106-107. ScholarBank@NUS Repository.
Abstract: We report the first demonstration of a single silicide contact technology employing a low workfunction metal alloy [Nickel (Ni) - Dysprosium (Dy)] silicide, while achieving low contact resistance RC, for both n- and p- FETs. A key enabler is the Aluminum ion implant technology for independent and effective reduction of RC for the strained p-FinFETs with SiGe S/D. For strained p-FinFETs, the Ni(Dy)SiGe contact with Al implant gives ∼20 % IDSAT enhancement over the conventional NiSiGe contact without Al implant. For strained n-FinFETs, Ni(Dy)Si:C S/D contact, simultaneously formed using the same process conditions, gives an I DSAT enhancement of ∼49 % over n-FinFETs with NiSi:C contacts.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84197
ISBN: 9784863480094
ISSN: 07431562
Appears in Collections:Staff Publications

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