Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant

Abstract

We report the first demonstration of a single silicide contact technology employing a low workfunction metal alloy [Nickel (Ni) - Dysprosium (Dy)] silicide, while achieving low contact resistance RC, for both n- and p- FETs. A key enabler is the Aluminum ion implant technology for independent and effective reduction of RC for the strained p-FinFETs with SiGe S/D. For strained p-FinFETs, the Ni(Dy)SiGe contact with Al implant gives ∼20 % IDSAT enhancement over the conventional NiSiGe contact without Al implant. For strained n-FinFETs, Ni(Dy)Si:C S/D contact, simultaneously formed using the same process conditions, gives an I DSAT enhancement of ∼49 % over n-FinFETs with NiSi:C contacts.