Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2013.6744299
Title: Single contact electron beam induced current technique for solar cell characterization
Authors: Meng, L.
Street, A.G.
Phang, J.C.H. 
Bhatia, C.S. 
Keywords: Characterization
PSPICE simulation
SCEBIC
Single contact electron beam induced current
Solar cell
Issue Date: 2013
Citation: Meng, L.,Street, A.G.,Phang, J.C.H.,Bhatia, C.S. (2013). Single contact electron beam induced current technique for solar cell characterization. Conference Record of the IEEE Photovoltaic Specialists Conference : 951-955. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2013.6744299
Abstract: This paper reports the first demonstration of single contact electron beam induced current (SCEBIC) technique on multicrystalline silicon (mc-Si) solar cells. A lumped single-diode analytical model is also proposed to theoretically explain the SCEBIC phenomenon within solar cells as well as the current transient characteristics of the major model parameters, such as shunt resistance Rsh, junction capacitance Cj, and parasitic capacitance Cs. The accuracy of the analytical model is then verified using PSPICE simulations, which show a close match with the experimental results. It is found that a large value of parasitic capacitance Cs is necessary to achieve good SCEBIC signal strength with a relatively low signal-to-noise ratio (SNR), and this is realized experimentally by adopting a metal enclosure in the measurement setup. In addition, the advantage of SCEBIC over conventional double-contact method is also demonstrated by SCEBIC characterization of partially processed solar cells, which clearly illustrates the high degree of flexibility of SCEBIC in solar cell characterization. © 2013 IEEE.
Source Title: Conference Record of the IEEE Photovoltaic Specialists Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/84194
ISBN: 9781479932993
ISSN: 01608371
DOI: 10.1109/PVSC.2013.6744299
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