Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISDRS.2011.6135352
Title: Silicidation using nickel and Dysprosium stack on Si(100): NiSi 2 formation and impact on Schottky Barrier Height
Authors: Lim, P.S.Y.
Zhou, Q. 
Chi, D.
Yeo, Y.-C. 
Issue Date: 2011
Source: Lim, P.S.Y.,Zhou, Q.,Chi, D.,Yeo, Y.-C. (2011). Silicidation using nickel and Dysprosium stack on Si(100): NiSi 2 formation and impact on Schottky Barrier Height. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2011.6135352
Abstract: High contact resistance R c at the silicide/semiconductor interface could limit the drive current in Field Effect Transistors (FETs) at sub-22 nm technology nodes. 1 For n-channel FETs, lowering the effective electron Schottky Barrier Height B n at the silicide/semiconductor interface will reduce R c. Incorporating rare earth materials such as Dysprosium (Dy) during nickel silicidation to form Ni-Dy alloy contacts 2 has been reported to lower B n. Previously, the B n lowering was attributed to the formation of a Dy-rich interlayer between the silicide and semiconductor. In this paper, we report new findings that NiSi 2 formation is the main reason for the reduction in B n for Dy-incorporated Ni silicides. © 2011 IEEE.
Source Title: 2011 International Semiconductor Device Research Symposium, ISDRS 2011
URI: http://scholarbank.nus.edu.sg/handle/10635/84178
ISBN: 9781457717550
DOI: 10.1109/ISDRS.2011.6135352
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