Please use this identifier to cite or link to this item:
https://doi.org/10.1109/IEDM.2011.6131648
| Title: | Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials | Authors: | Tran, X.A. Gao, B. Kang, J.F. Wu, X. Wu, L. Fang, Z. Wang, Z.R. Pey, K.L. Yeo, Y.C. Du, A.Y. Liu, M. Nguyen, B.Y. Li, M.F. Yu, H.Y. |
Issue Date: | 2011 | Citation: | Tran, X.A.,Gao, B.,Kang, J.F.,Wu, X.,Wu, L.,Fang, Z.,Wang, Z.R.,Pey, K.L.,Yeo, Y.C.,Du, A.Y.,Liu, M.,Nguyen, B.Y.,Li, M.F.,Yu, H.Y. (2011). Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials. Technical Digest - International Electron Devices Meeting, IEDM : 31.2.1-31.2.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2011.6131648 | Abstract: | In this paper, we report a high performance, forming-free and self-rectifying unipolar HfO x based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>10 3 @ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >10 6 for worst case condition). © 2011 IEEE. | Source Title: | Technical Digest - International Electron Devices Meeting, IEDM | URI: | http://scholarbank.nus.edu.sg/handle/10635/84169 | ISBN: | 9781457705052 | ISSN: | 01631918 | DOI: | 10.1109/IEDM.2011.6131648 |
| Appears in Collections: | Staff Publications |
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