Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2011.6131648
Title: Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials
Authors: Tran, X.A.
Gao, B.
Kang, J.F.
Wu, X.
Wu, L.
Fang, Z.
Wang, Z.R.
Pey, K.L.
Yeo, Y.C. 
Du, A.Y.
Liu, M.
Nguyen, B.Y.
Li, M.F.
Yu, H.Y.
Issue Date: 2011
Citation: Tran, X.A.,Gao, B.,Kang, J.F.,Wu, X.,Wu, L.,Fang, Z.,Wang, Z.R.,Pey, K.L.,Yeo, Y.C.,Du, A.Y.,Liu, M.,Nguyen, B.Y.,Li, M.F.,Yu, H.Y. (2011). Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials. Technical Digest - International Electron Devices Meeting, IEDM : 31.2.1-31.2.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2011.6131648
Abstract: In this paper, we report a high performance, forming-free and self-rectifying unipolar HfO x based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>10 3 @ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >10 6 for worst case condition). © 2011 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/84169
ISBN: 9781457705052
ISSN: 01631918
DOI: 10.1109/IEDM.2011.6131648
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