Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSIT.2008.4588605
Title: Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors
Authors: Wong, H.-S.
Liu, F.-Y.
Ang, K.-W.
Koh, S.-M.
Koh, A.T.-Y.
Liow, T.-Y.
Lee, R.T.-P. 
Lim, A.E.-J.
Fang, W.-W.
Zhu, M. 
Chan, L.
Balasubramaniam, N.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2008
Citation: Wong, H.-S.,Liu, F.-Y.,Ang, K.-W.,Koh, S.-M.,Koh, A.T.-Y.,Liow, T.-Y.,Lee, R.T.-P.,Lim, A.E.-J.,Fang, W.-W.,Zhu, M.,Chan, L.,Balasubramaniam, N.,Samudra, G.,Yeo, Y.-C. (2008). Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors. Digest of Technical Papers - Symposium on VLSI Technology : 168-169. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2008.4588605
Abstract: We report a novel contact technology comprising Selenium (Se) co-implantation and segregation to reduce Schottky barrier height ΦBn and contact resistance for n-FETs. Introducing Se at the silicide-semiconductor interface pins the Fermi level near the conduction band, and achieves a record low ΦBn of 0.1 eV on Si:C S/D stressors. Comparable sheet resistance and junction leakage are observed with and without Se segregation. When integrated in nanoscale SOI n-FETs with Ni-silicided Si:C S/D, the new Se-segregation contact technology achieves 36% reduction in total series resistance and 32% ION enhancement. Linear transconductance GMLin also shows large enhancement in the sample with Se-segregated contacts. © 2008 IEEE.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84165
ISBN: 9781424418053
ISSN: 07431562
DOI: 10.1109/VLSIT.2008.4588605
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