Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84159
Title: Schottky source/drain MOSFETs on SiGe on insulator with high-K gate dielectric and TaN gate electrode
Authors: Gao, F.
Li, R.
Chi, D.Z.
Balakumar, S.
Tung, C.-H.
Lee, S.J. 
Issue Date: 2006
Source: Gao, F.,Li, R.,Chi, D.Z.,Balakumar, S.,Tung, C.-H.,Lee, S.J. (2006). Schottky source/drain MOSFETs on SiGe on insulator with high-K gate dielectric and TaN gate electrode. Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06 : 160-163. ScholarBank@NUS Repository.
Abstract: We report thin SGOI (Silicon Germanium on Insulator) with 65% Ge concentration p- MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor) using Ni-germanosilicide Schottky S/D (source/drain) and HfO2/TaN gate stack integrated with conventional self-aligned top gate process. Unlike high temperature S/D activation needed for conventional transistor, low Ni-germanosilicide S/D formation temperature contributes to the excellent capacitance-voltage characteristic, low gate leakage current and hence, well-behaved transistor performance. In addition, SOI structure suppresses the junction leakage problem, resulting in good agreement between the source current and drain current of the MOSFET. © 2006 IEEE.
Source Title: Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06
URI: http://scholarbank.nus.edu.sg/handle/10635/84159
ISBN: 1424400473
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