Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssc.200461393
Title: Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon
Authors: Park, S.-J.
Lee, H.-B.
Shan, W.L.
Chua, S.-J. 
Lee, J.-H.
Hahm, S.-H. 
Issue Date: 2005
Source: Park, S.-J., Lee, H.-B., Shan, W.L., Chua, S.-J., Lee, J.-H., Hahm, S.-H. (2005). Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon. Physica Status Solidi C: Conferences 2 (7) : 2559-2563. ScholarBank@NUS Repository. https://doi.org/10.1002/pssc.200461393
Abstract: The planar Schottky diodes were fabricated, characterized and modelled to study the electrical characteristics of cracked GaN epitaxial layer on (111) silicon substrate. We deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact resistivity was 5.51×10-5 Ω·cm2 after annealing in N2 ambient at 700°C for 30 s. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideal factor was 2.4. We got the cutoff wavelength at 360 nm, peak responsivity of 0.097 A/W at 300nm, and UV/visible rejection ratio was about 104. The SPICE simulation with the circuit model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Physica Status Solidi C: Conferences
URI: http://scholarbank.nus.edu.sg/handle/10635/84157
ISSN: 16101634
DOI: 10.1002/pssc.200461393
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