Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2007.4419038
Title: Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealing
Authors: Lee, R.T.-P. 
Koh, A.T.-Y.
Liu, F.-Y.
Fang, W.-W.
Liow, T.-Y.
Tan, K.-M.
Lim, P.-C.
Lim, A.E.-J.
Zhu, M. 
Hoe, K.-M.
Tung, C.-H.
Lo, G.-Q.
Wang, X.
Low, D.K.-Y.
Samudra, G.S. 
Chi, D.-Z.
Yeo, Y.-C. 
Issue Date: 2007
Citation: Lee, R.T.-P., Koh, A.T.-Y., Liu, F.-Y., Fang, W.-W., Liow, T.-Y., Tan, K.-M., Lim, P.-C., Lim, A.E.-J., Zhu, M., Hoe, K.-M., Tung, C.-H., Lo, G.-Q., Wang, X., Low, D.K.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C. (2007). Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealing. Technical Digest - International Electron Devices Meeting, IEDM : 685-688. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4419038
Abstract: We report the demonstration of two distinct approaches to reduce parasitic resistances in MuGFETs with silicon-carbon (Si:C) S/D. First, the addition of dysprosium (Dy) in NiSi:C contacts reduces the electron barrier height by 38% on SiC. Device integration of the Ni(Dy)Si:C contacts provides a 30% reduction in series resistance leading to improved IDsat, performance. Second, we also report the first demonstration of pulsed laser annealing (PLA) for MuGFETs with Si:C S/D for enhanced dopant activation, leading to ∼50% lower series resistance. High carbon substitutional concentration (above 1.0 %) in Si:C can be achieved with PLA for enhanced strain effects. © 2007 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/84151
ISSN: 01631918
DOI: 10.1109/IEDM.2007.4419038
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