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|Title:||Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs|
|Citation:||Wang, G.H., Toh, E.-H., Chan, T.K., Osipowicz, T., Foo, Y.-L., Tung, C.H., Lo, G.-Q., Samudra, G., Yeo, Y.-C. (2008). Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 128-129. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2008.4530830|
|Abstract:||We report the first demonstration of silicon-gerrnanium-tin (SiGeSn) source and drain (S/D) stressors formed by Sn implant and solid-phase epitaxy (SPE). SPE was developed to achieve high levels of Sn substitutionality in SiGe S/D, to induce compressive strain in the channel. No recess etch or epi deposition steps were required, leading to minimal incremental process cost. SiGeSn S/D can be easily integrated in a standard CMOS process. Sub-50 nm p-FETs were fabricated. With a substitutional Sn concentration of 6.6% in SiGe S/D, having an equivalent lattice constant to that of Si0.4GC0.6, enhancement of IDsat and bole mobility (μhole) are 48% and 88% respectively, over p-FETs without Sn implant. With the demonstration of SiGeSn S/D stressors, we provide a technology extension to SiGe S/D technology for further p-FET enhancement. © 2008 IEEE.|
|Source Title:||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|Appears in Collections:||Staff Publications|
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