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|Title:||Photoemission study of energy band alignment of Ge2Sb 2Te5 and common CMOS materials|
|Citation:||Fang, L.W.-W.,Pan, J.-S.,Lim, A.E.-J.,Lee, R.T.-P.,Li, M.,Zhao, R.,Shi, L.,Chong, T.-C.,Yeo, Y.-C. (2008). Photoemission study of energy band alignment of Ge2Sb 2Te5 and common CMOS materials. Materials Research Society Symposium Proceedings 1072 : 54-60. ScholarBank@NUS Repository.|
|Abstract:||We report the energy band alignment of Ge2Sb2Te 5 and a variety of common complementary-metal-oxide-semiconductor (CMOS) compatible materials. These materials include silicon, silicon oxide, hafnium oxide, silicon nitride as well as nickel suicide. High-resolution X-ray photoelectron spectroscopy was employed as the main tool to obtain the core-level spectra, the valence band spectra, and the energy loss spectra. A precise determination of the valence band offsets of Ge2Sb 2Te5 and the various materials were obtained. The conduction band offsets were then determined. The energy band line-ups of Ge2Sb2Te5 and these CMOS compatible materials were established. © 2008 Materials Research Society.|
|Source Title:||Materials Research Society Symposium Proceedings|
|Appears in Collections:||Staff Publications|
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