Please use this identifier to cite or link to this item:
|Title:||P-channel I-MOS transistor featuring silicon nano-wire with multiple-gates, strained Si1-yCy I-region, in situ doped Si 1-yCy source, and sub-5 mV/decade subthreshold swing|
|Citation:||Toh, E.-H., Wang, G.H., Weeks, D., Zhu, M., Bauer, M., Spear, J., Chan, L., Thomas, S.G., Samudra, G., Yeo, Y.-C. (2008). P-channel I-MOS transistor featuring silicon nano-wire with multiple-gates, strained Si1-yCy I-region, in situ doped Si 1-yCy source, and sub-5 mV/decade subthreshold swing. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 24-25. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2008.4530781|
|Abstract:||We realized Impact Ionization Nanowire Multiple-gate Field-Effect Transistors (I-MuGFETs or I-FinFETs) having a multiplegate/nanowire-channel architecture to exploit the superior gate-to-channel coupling for reduced breakdown voltage VBD and enhanced device performance. The first p-channel Impact Ionization MOS transistor (I-MOS) having in situ doped source was also demonstrated. An in situ phosphorus-doped Si source with improved dopant activation and very abrupt junction profile reduces VBD and enhances the on-state current Ion. A further improvement was also made by incorporating strained Si1-yCy, impact-ionization region (I-region) and in situ doped Si1-yCy source, leading to further reduction in VBD and enhancement in I on. This is due to strain-induced reduction of the impact-ionization threshold energy Eth. In addition, excellent subthreshold swing of below 5 mV/decade at room temperature was achieved for all devices. © 2008 IEEE.|
|Source Title:||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 17, 2018
WEB OF SCIENCETM
checked on Oct 10, 2018
checked on Oct 5, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.