Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2007.4418869
Title: Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application
Authors: Zhang, G.
Wan, S.H.
Bobade, S.M.
Lee, S.-H.
Cho, B.-J. 
Won, J.Y.
Issue Date: 2007
Citation: Zhang, G., Wan, S.H., Bobade, S.M., Lee, S.-H., Cho, B.-J., Won, J.Y. (2007). Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application. Technical Digest - International Electron Devices Meeting, IEDM : 83-86. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4418869
Abstract: A novel ZrO2/Si3N4 dual charge storage layer (DCSL) has been proposed for highly reliable multi-level cell (MLC) application. Separated charge storage and step-up potential well have been resulted from the ZrO2/Si3N4 DCSL. Threshold voltage (Vth) levels are controlled by the charge storage capacity of each CSL, instead of the amount of charge injection, making a superior multi-level Vth control possible. Negligible Vth offsets (
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/84026
ISSN: 01631918
DOI: 10.1109/IEDM.2007.4418869
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