Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/84025

Title:	Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs
Authors:	Koh, S.-M. Ding, Y. Guo, C. Leong, K.-C. Samudra, G.S. Yeo, Y.-C.
Issue Date:	2011
Citation:	Koh, S.-M.,Ding, Y.,Guo, C.,Leong, K.-C.,Samudra, G.S.,Yeo, Y.-C. (2011). Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs. Digest of Technical Papers - Symposium on VLSI Technology : 86-87. ScholarBank@NUS Repository.
Abstract:	We report the demonstration of a new contact resistance reduction technology for n+ Si S/D using Tellurium (Te) implant and segregation, achieving a low electron SBH of 0.11 eV. The Te implant reduced contact resistance in n-FinFETs by 40 %. When integrated in a process flow where Te is also introduced into the gate, improvement in gate electrostatic control is observed, leading to an improvement in ballistic efficiency. At I Off of 100 nA/μm, Te implant increases IOn by 22 % as compared with control FinFETs without Te implant. © 2011 JSAP (Japan Society of Applied Physi.
Source Title:	Digest of Technical Papers - Symposium on VLSI Technology
URI:	http://scholarbank.nus.edu.sg/handle/10635/84025
ISBN:	9784863481640
ISSN:	07431562
Appears in Collections:	Staff Publications

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