Please use this identifier to cite or link to this item:
|Title:||Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs|
|Source:||Koh, S.-M.,Ding, Y.,Guo, C.,Leong, K.-C.,Samudra, G.S.,Yeo, Y.-C. (2011). Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs. Digest of Technical Papers - Symposium on VLSI Technology : 86-87. ScholarBank@NUS Repository.|
|Abstract:||We report the demonstration of a new contact resistance reduction technology for n+ Si S/D using Tellurium (Te) implant and segregation, achieving a low electron SBH of 0.11 eV. The Te implant reduced contact resistance in n-FinFETs by 40 %. When integrated in a process flow where Te is also introduced into the gate, improvement in gate electrostatic control is observed, leading to an improvement in ballistic efficiency. At I Off of 100 nA/μm, Te implant increases IOn by 22 % as compared with control FinFETs without Te implant. © 2011 JSAP (Japan Society of Applied Physi.|
|Source Title:||Digest of Technical Papers - Symposium on VLSI Technology|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 16, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.