Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84025
Title: Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs
Authors: Koh, S.-M.
Ding, Y.
Guo, C.
Leong, K.-C.
Samudra, G.S. 
Yeo, Y.-C. 
Issue Date: 2011
Source: Koh, S.-M.,Ding, Y.,Guo, C.,Leong, K.-C.,Samudra, G.S.,Yeo, Y.-C. (2011). Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs. Digest of Technical Papers - Symposium on VLSI Technology : 86-87. ScholarBank@NUS Repository.
Abstract: We report the demonstration of a new contact resistance reduction technology for n+ Si S/D using Tellurium (Te) implant and segregation, achieving a low electron SBH of 0.11 eV. The Te implant reduced contact resistance in n-FinFETs by 40 %. When integrated in a process flow where Te is also introduced into the gate, improvement in gate electrostatic control is observed, leading to an improvement in ballistic efficiency. At I Off of 100 nA/μm, Te implant increases IOn by 22 % as compared with control FinFETs without Te implant. © 2011 JSAP (Japan Society of Applied Physi.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84025
ISBN: 9784863481640
ISSN: 07431562
Appears in Collections:Staff Publications

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