Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2013.6545609
Title: Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs
Authors: Kong, E.
Gong, X.
Guo, P.
Liu, B.
Yeo, Y.-C. 
Issue Date: 2013
Source: Kong, E.,Gong, X.,Guo, P.,Liu, B.,Yeo, Y.-C. (2013). Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs. 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2013.6545609
Abstract: A novel technique for doping the source/drain or source/drain extension regions of InGaAs MOSFETs was developed based on silane treatment and laser anneal. This doping technique has the potential to provide conformal, ultra-shallow, and very abrupt n++ junctions while being free from implant damage, and is first demonstrated in planar InGaAs MOSFETs. © 2013 IEEE.
Source Title: 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
URI: http://scholarbank.nus.edu.sg/handle/10635/84023
ISBN: 9781467330817
DOI: 10.1109/VLSI-TSA.2013.6545609
Appears in Collections:Staff Publications

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