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https://doi.org/10.1109/VTSA.2011.5872238
| Title: | New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs | Authors: | Koh, S.-M. Kong, E.Y.J. Liu, B. Ng, C.-M. Liu, P. Mo, Z.-Q. Leong, K.-C. Samudra, G.S. Yeo, Y.-C. |
Issue Date: | 2011 | Citation: | Koh, S.-M.,Kong, E.Y.J.,Liu, B.,Ng, C.-M.,Liu, P.,Mo, Z.-Q.,Leong, K.-C.,Samudra, G.S.,Yeo, Y.-C. (2011). New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 74-75. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2011.5872238 | Abstract: | We report the demonstration of a new contact resistance reduction technology for Si:C S/D using Tellurium (Te) implant and segregation. When integrated in a novel process flow featuring a single-metal platinum-based silicide (PtSi) contact technology, independent control of SBH in n- and p-FinFETs can be achieved. A low electron SBH of 120 meV is attained for n-FinFETs with Si:C S/D using PtSi and Te segregation, giving an I Dsat enhancement of 22 % in comparison with controls without Te implant. © 2011 IEEE. | Source Title: | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | URI: | http://scholarbank.nus.edu.sg/handle/10635/84010 | ISBN: | 9781424484928 | DOI: | 10.1109/VTSA.2011.5872238 |
| Appears in Collections: | Staff Publications |
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