Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2013.6724643
Title: Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure
Authors: Goh, K.H.
Guo, Y.
Gong, X.
Liang, G.-C. 
Yeo, Y.-C. 
Issue Date: 2013
Citation: Goh, K.H.,Guo, Y.,Gong, X.,Liang, G.-C.,Yeo, Y.-C. (2013). Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure. Technical Digest - International Electron Devices Meeting, IEDM : 16.5.1-16.5.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2013.6724643
Abstract: In this work, we report the realization of In0.53Ga 0.47As Junctionless FET (JLFET) with the shortest reported channel length Lch (6 nm) for any III-V transistors. The JLFET features a 1 nm-thick extremely-thin channel sandwiched between a 1 nm-thick InP cap and the InP substrate, and a heavily doped raised S/D structure. Peak transconductance Gm. Peak of 1480 μS/μm at VDS = 0.7 V with an EOT of 2.5 nm and an ultra-low S/D resistance RSD of 165 Ω.μm were achieved. In addition, the ballistic behavior of sub-7 nm III-V transistors was experimentally investigated by using a novel extraction approach for the first time. The In0.53Ga0.47As JLFET with LCH of 6 nm was demonstrated to have a mean free path λ of 27.2 nm and nearly ballistic transport with ballistic efficiency B of 0.82. © 2013 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/84001
ISBN: 9781479923076
ISSN: 01631918
DOI: 10.1109/IEDM.2013.6724643
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