Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2011.5872217
Title: In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process
Authors: Zhang, X.
Guo, H.
Gong, X.
Zhou, Q. 
Lin, H.-Y.
Lin, Y.-R.
Ko, C.-H.
Wann, C.H.
Yeo, Y.-C. 
Issue Date: 2011
Source: Zhang, X.,Guo, H.,Gong, X.,Zhou, Q.,Lin, H.-Y.,Lin, Y.-R.,Ko, C.-H.,Wann, C.H.,Yeo, Y.-C. (2011). In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 26-27. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2011.5872217
Abstract: Spacer-less In0.7Ga0.3As n-MOSFETs with self-aligned Ni-InGaAs contacts formed using a direct reaction between Ni and InGaAs were demonstrated. A novel salicide-like metallization process was developed to achieve self-aligned Ni-InGaAs contacts, comprising the steps of Ni reaction with InxGa1xAs and selective removal of excess Ni. Dopantless n-MOSFETs with metallic Ni-InGaAs source/drain (S/D) and n-MOSFETs with Si-doped S/D and Ni-InGaAs contacts were compared. Si implant performed before the metallization effectively suppressed the off-state current I OFF by more than 10 times. © 2011 IEEE.
Source Title: International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83839
ISBN: 9781424484928
DOI: 10.1109/VTSA.2011.5872217
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