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|Title:||Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices|
|Citation:||Zang, H.,Loh, W.Y.,Oh, H.J.,Choi, K.J.,Nguyen, H.S.,Lo, G.Q.,Cho, B.J. (2007). Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices. ECS Transactions 6 (1) : 105-110. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2727393|
|Abstract:||We report a novel Si/Si1-xGex channel with improved current drivability and reliability using a buried Si0.99C 0.01. It is also found that the Si/Si1-xGe x/Si0.99C0.01 structure is effective in reducing Ge out-diffusion which helps to improve gate dielectric interface quality. © The Electrochemical Society.|
|Source Title:||ECS Transactions|
|Appears in Collections:||Staff Publications|
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