Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices

Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2727393

Title:	Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices
Authors:	Zang, H. Loh, W.Y. Oh, H.J. Choi, K.J. Nguyen, H.S. Lo, G.Q. Cho, B.J.
Issue Date:	2007
Citation:	Zang, H.,Loh, W.Y.,Oh, H.J.,Choi, K.J.,Nguyen, H.S.,Lo, G.Q.,Cho, B.J. (2007). Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices. ECS Transactions 6 (1) : 105-110. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2727393
Abstract:	We report a novel Si/Si1-xGex channel with improved current drivability and reliability using a buried Si0.99C 0.01. It is also found that the Si/Si1-xGe x/Si0.99C0.01 structure is effective in reducing Ge out-diffusion which helps to improve gate dielectric interface quality. © The Electrochemical Society.
Source Title:	ECS Transactions
URI:	http://scholarbank.nus.edu.sg/handle/10635/83827
ISBN:	9781566775502
ISSN:	19385862
DOI:	10.1149/1.2727393
Appears in Collections:	Staff Publications

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