Please use this identifier to cite or link to this item: https://doi.org/10.1109/EDAPS.2012.6469420
Title: Impact of TSV induced thermo-mechanical stress on semiconductor device performance
Authors: Lee, H.M.
Liu, E.-X.
Samudra, G.S. 
Li, E.-P.
Issue Date: 2012
Citation: Lee, H.M.,Liu, E.-X.,Samudra, G.S.,Li, E.-P. (2012). Impact of TSV induced thermo-mechanical stress on semiconductor device performance. 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012 : 189-192. ScholarBank@NUS Repository. https://doi.org/10.1109/EDAPS.2012.6469420
Abstract: Evaluation of the impact caused by Through-Silicon Vias (TSV) induced thermo-mechanical stress on device performance is becoming important due to the close proximity between TSVs and the semiconductor devices in 3D integration. From the literatures, there exist discrepancies between theory, simulated and experimental results presented. For accurate predictions, we simulated stress build-up by taking the full CMOS process flow into consideration. We considered the interaction between TSV, stressors such as tensile stress liner and Shallow Trench Isolation (STI) and device channel. From the results, it was found that the nMOSFET Ion variation is less than 2% at Keep Out Zone (KOZ) of 1 μm due to TSV induced stress while the Ion variation is about 30% due to the tensile stress liner. Hence, the impact of TSV induced stress on nMOSFET performance is insignificant compared to that of tensile stress liner in the device. © 2012 IEEE.
Source Title: 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012
URI: http://scholarbank.nus.edu.sg/handle/10635/83820
ISBN: 9781467314435
DOI: 10.1109/EDAPS.2012.6469420
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

4
checked on Oct 15, 2018

Page view(s)

41
checked on Sep 21, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.