Please use this identifier to cite or link to this item:
Title: ICP etching of RF sputtered and PECVD silicon carbide films
Authors: Shi, J. 
Chor, E.F. 
Choi, W.K. 
Issue Date: 20-Mar-2002
Source: Shi, J.,Chor, E.F.,Choi, W.K. (2002-03-20). ICP etching of RF sputtered and PECVD silicon carbide films. International Journal of Modern Physics B 16 (6-7) : 1067-1071. ScholarBank@NUS Repository.
Abstract: In this paper, we report the Inductive Coupled Plasma (ICP) etching of RF sputtered unhydrogenated amorphous silicon carbide film (a-Si0.5C0.5), and plasma enhanced chemical vapour deposited (PECVD) hydrogenated amorphous silicon carbide films (a-Si0.3C0.7:H and a-Si0.7C0.3:H), as-prepared and annealed, using CF4/O2 chemistry. The etch rate of amorphous SiC is observed to be closely related to the hydrogen content. The mechanism of etching is studied by varying the RIE power, ICP power and pressure. It has been suggested that the removal of surface polymers (CFx) is a key factor in the etching process. In order to study the difference in etch rate between sputtered and PECVD SiC and the effects of changing Si/C ratio, IR spectra are used to reveal the bonds density in the samples.
Source Title: International Journal of Modern Physics B
ISSN: 02179792
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Mar 10, 2018

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.