Please use this identifier to cite or link to this item: https://doi.org/10.1109/RELPHY.2007.369569
Title: Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors
Authors: Ang, K.-W.
Wan, C.
Chui, K.-J.
Tung, C.-H.
Balasubramanian, N.
Li, M.-F. 
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2007
Source: Ang, K.-W., Wan, C., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G., Yeo, Y.-C. (2007). Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors. Annual Proceedings - Reliability Physics (Symposium) : 684-685. ScholarBank@NUS Repository. https://doi.org/10.1109/RELPHY.2007.369569
Abstract: The hot carrier reliability of a novel uniaxial tensile strained n-channel transistor with silicon-carbon (Si1-yCy) source and drain (S/D) regions is investigated for the first time. Strained n-FETs show reduced hot carrier lifetime than the control n-FETs when stressed at comparable I sub/Id ratio. Worst case hot carrier stressing is observed to occur at maximum substrate current Isub condition which leads to a higher drive current IDsat degradation as compared to the V GS= VDS stress. At nominal operating voltages, the strained n-FET is projected to have a hot carrier lifetime well exceeding the 10-years requirement, showing no severe reliability issues. © 2007 IEEE.
Source Title: Annual Proceedings - Reliability Physics (Symposium)
URI: http://scholarbank.nus.edu.sg/handle/10635/83804
ISBN: 1424409195
ISSN: 00999512
DOI: 10.1109/RELPHY.2007.369569
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