Please use this identifier to cite or link to this item:
|Title:||Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors|
|Source:||Ang, K.-W., Wan, C., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G., Yeo, Y.-C. (2007). Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors. Annual Proceedings - Reliability Physics (Symposium) : 684-685. ScholarBank@NUS Repository. https://doi.org/10.1109/RELPHY.2007.369569|
|Abstract:||The hot carrier reliability of a novel uniaxial tensile strained n-channel transistor with silicon-carbon (Si1-yCy) source and drain (S/D) regions is investigated for the first time. Strained n-FETs show reduced hot carrier lifetime than the control n-FETs when stressed at comparable I sub/Id ratio. Worst case hot carrier stressing is observed to occur at maximum substrate current Isub condition which leads to a higher drive current IDsat degradation as compared to the V GS= VDS stress. At nominal operating voltages, the strained n-FET is projected to have a hot carrier lifetime well exceeding the 10-years requirement, showing no severe reliability issues. © 2007 IEEE.|
|Source Title:||Annual Proceedings - Reliability Physics (Symposium)|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 22, 2018
checked on Feb 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.