High spin filtering under the influence of in-plane magneto-electric field and spin orbit coupling

Abstract

Periodic delta magnetic barriers are applied in the plane of a III-V semiconductor 2DEG across the electron conduction path of a HEMT device. Because of structural inversion asymmetry in the 2DEG, electron spin is coupled to both the crystal field and the in-plane magnetic field, producing highly spin-polarized current in the device. To maximize spin polarization P, an array of repeating zero-gauge type of magneto-electric barriers is used. Our calculation for electron transmission T for 10 repeating barrier units shows resonant-like peaks for different electron spin, resulting in ideal P of 100% over a wide energy range of 0.5-0.9 E F. It was also found that a perpendicular E field can also modulate P in the 2DEG channel. © 2005 American Institute of Physics.