Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2006.306122
Title: High performance high-k/metal gate germanium MOSFETs with shallow junction fabricated by laser thermal process
Authors: Zhang, Q.C.
Huang, J.D.
Wu, N.
Chen, G.X. 
Hong, M.H. 
Bera, L.K.
Zhu, C. 
Issue Date: 2007
Source: Zhang, Q.C.,Huang, J.D.,Wu, N.,Chen, G.X.,Hong, M.H.,Bera, L.K.,Zhu, C. (2007). High performance high-k/metal gate germanium MOSFETs with shallow junction fabricated by laser thermal process. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 146-148. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2006.306122
Abstract: Gate-first self-aligned Ge nMOSFET and pMOSFET with metal gate and CVD HfO 2 have been successfully fabricated, using a novel laser thermal process (LTP) S/D activation. Compared with conventional rapid thermal annealing (RTA) activation, LTP provides smaller S/D series resistance with shallower junction depth while maintaining good gate stack integrity. Much improved drive current is obtained on Ge nMOSFET. A high hole mobility (1.9X of universal Si/SiO 2) is also achieved on Ge pMOSFET. © 2006 IEEE.
Source Title: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83784
ISBN: 1424401615
DOI: 10.1109/ICSICT.2006.306122
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