Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.0943ecst
Title: High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate
Authors: Han, G. 
Su, S.
Yang, Y.
Guo, P.
Gong, X.
Wang, L.
Wang, W.
Guo, C.
Zhang, G.
Xue, C.
Cheng, B.
Yeo, Y.C. 
Issue Date: 2012
Citation: Han, G., Su, S., Yang, Y., Guo, P., Gong, X., Wang, L., Wang, W., Guo, C., Zhang, G., Xue, C., Cheng, B., Yeo, Y.C. (2012). High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate. ECS Transactions 50 (9) : 943-948. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0943ecst
Abstract: We report the demonstration of strained GeSn channel pMOSFETs on (111)- and (100)-oriented Ge substrates. The Sn composition is 4.1%. The device interface is passivated using (NH4)2S solution. Compared to devices on Ge(100), GeSn pMOSFETs on Ge(111) demonstrate a 20% enhancement in effective hole mobility at an inversion charge density (Qinv) of 2 × 10 13 cm-2. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/83779
ISBN: 9781607683575
ISSN: 19385862
DOI: 10.1149/05009.0943ecst
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