High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate

Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.0943ecst

Title:	High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate
Authors:	Han, G. Su, S. Yang, Y. Guo, P. Gong, X. Wang, L. Wang, W. Guo, C. Zhang, G. Xue, C. Cheng, B. Yeo, Y.C.
Issue Date:	2012
Citation:	Han, G., Su, S., Yang, Y., Guo, P., Gong, X., Wang, L., Wang, W., Guo, C., Zhang, G., Xue, C., Cheng, B., Yeo, Y.C. (2012). High hole mobility in strained germanium-tin (GeSn) channel pMOSFET fabricated on (111) substrate. ECS Transactions 50 (9) : 943-948. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0943ecst
Abstract:	We report the demonstration of strained GeSn channel pMOSFETs on (111)- and (100)-oriented Ge substrates. The Sn composition is 4.1%. The device interface is passivated using (NH4)2S solution. Compared to devices on Ge(100), GeSn pMOSFETs on Ge(111) demonstrate a 20% enhancement in effective hole mobility at an inversion charge density (Qinv) of 2 × 10 13 cm-2. © The Electrochemical Society.
Source Title:	ECS Transactions
URI:	http://scholarbank.nus.edu.sg/handle/10635/83779
ISBN:	9781607683575
ISSN:	19385862
DOI:	10.1149/05009.0943ecst
Appears in Collections:	Staff Publications

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