Please use this identifier to cite or link to this item:
|Title:||High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications|
|Authors:||Kim, S.-J. |
|Citation:||Kim, S.-J.,Cho, B.J.,Yu, M.B.,Li, M.-F.,Xiong, Y.-Z.,Zhu, C.,Chin, A.,Kwong, D.-L. (2005). High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 56-57. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469210|
|Abstract:||MIM capacitor with niobium pentoxide (Nb2O2) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb2O5 MIM with HfO 2/Al2O3 barriers delivers a record high capacitance density >17 fF/μm2 with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.|
|Source Title:||Digest of Technical Papers - Symposium on VLSI Technology|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 22, 2018
checked on Sep 21, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.