Please use this identifier to cite or link to this item: https://doi.org/10.1109/.2005.1469210
Title: High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications
Authors: Kim, S.-J. 
Cho, B.J. 
Yu, M.B.
Li, M.-F. 
Xiong, Y.-Z.
Zhu, C. 
Chin, A. 
Kwong, D.-L.
Issue Date: 2005
Citation: Kim, S.-J.,Cho, B.J.,Yu, M.B.,Li, M.-F.,Xiong, Y.-Z.,Zhu, C.,Chin, A.,Kwong, D.-L. (2005). High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 56-57. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469210
Abstract: MIM capacitor with niobium pentoxide (Nb2O2) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb2O5 MIM with HfO 2/Al2O3 barriers delivers a record high capacitance density >17 fF/μm2 with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83776
ISSN: 07431562
DOI: 10.1109/.2005.1469210
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