Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.0979ecst
Title: Germanium tin tunneling field-effect transistor for sub-0.4 v operation
Authors: Yang, Y.
Low, K.L.
Guo, P.
Wei, W.
Han, G. 
Yeo., Y.-C. 
Issue Date: 2012
Source: Yang, Y., Low, K.L., Guo, P., Wei, W., Han, G., Yeo., Y.-C. (2012). Germanium tin tunneling field-effect transistor for sub-0.4 v operation. ECS Transactions 50 (9) : 979-986. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0979ecst
Abstract: Germanium Tin (Ge1-xSnx) as a group IV material has a direct and small band-gap for x > 0.11, which is attractive for the application in tunneling field-effect transistor (TFET). In this work, the design of Ge1-xSnx TFET operating at low supply voltages is investigated by simulation. Device simulation results show that Ge 1-xSnx-based TFET can achieve high tunneling current and has potential for logic applications using sub-0.4 V supply voltage. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/83763
ISBN: 9781607683575
ISSN: 19385862
DOI: 10.1149/05009.0979ecst
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

WEB OF SCIENCETM
Citations

1
checked on Feb 6, 2018

Page view(s)

33
checked on Feb 20, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.