Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83747
Title: Frequency dependent dynamic charge trapping in HfO 2 and threshold voltage instability in MOSFETs
Authors: Shen, C.
Yu, H.Y. 
Wang, X.P.
Li, M.-F. 
Yeo, Y.-C. 
Chan, D.S.H. 
Bera, K.L.
Kwong, D.L.
Issue Date: 2004
Source: Shen, C.,Yu, H.Y.,Wang, X.P.,Li, M.-F.,Yeo, Y.-C.,Chan, D.S.H.,Bera, K.L.,Kwong, D.L. (2004). Frequency dependent dynamic charge trapping in HfO 2 and threshold voltage instability in MOSFETs. Annual Proceedings - Reliability Physics (Symposium) : 601-602. ScholarBank@NUS Repository.
Abstract: In tills paper, we perform the first investigation of biased threshold voltage instability (BTI) in MOSFETs with MOCVD HfO 2 gate dielectrics under both static and dynamic stress. For an ac stress of a given gate voltage amplitude, we observed reduction of BTI degradation with an increase in stress frequency for both n- and p-MOSFETs. A physical model that accounts for two-step procedure of trap activation (de-activation) and carrier capture (emission) in the HfO 2 dielectric under stress is proposed. Simulation results based on the new model shows good agreement with all experiment data.
Source Title: Annual Proceedings - Reliability Physics (Symposium)
URI: http://scholarbank.nus.edu.sg/handle/10635/83747
ISSN: 00999512
Appears in Collections:Staff Publications

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