Please use this identifier to cite or link to this item:
|Title:||Frequency dependent dynamic charge trapping in HfO 2 and threshold voltage instability in MOSFETs|
|Source:||Shen, C.,Yu, H.Y.,Wang, X.P.,Li, M.-F.,Yeo, Y.-C.,Chan, D.S.H.,Bera, K.L.,Kwong, D.L. (2004). Frequency dependent dynamic charge trapping in HfO 2 and threshold voltage instability in MOSFETs. Annual Proceedings - Reliability Physics (Symposium) : 601-602. ScholarBank@NUS Repository.|
|Abstract:||In tills paper, we perform the first investigation of biased threshold voltage instability (BTI) in MOSFETs with MOCVD HfO 2 gate dielectrics under both static and dynamic stress. For an ac stress of a given gate voltage amplitude, we observed reduction of BTI degradation with an increase in stress frequency for both n- and p-MOSFETs. A physical model that accounts for two-step procedure of trap activation (de-activation) and carrier capture (emission) in the HfO 2 dielectric under stress is proposed. Simulation results based on the new model shows good agreement with all experiment data.|
|Source Title:||Annual Proceedings - Reliability Physics (Symposium)|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 14, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.