Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83738
Title: Femtosecond laser-induced crystallization in as-deposited Ge 1Sb 2Te 4 films
Authors: Wang, Q.F.
Shi, L.P.
Huang, S.M.
Miao, X.S.
Wong, K.P.
Chong, T.C. 
Issue Date: 2003
Source: Wang, Q.F.,Shi, L.P.,Huang, S.M.,Miao, X.S.,Wong, K.P.,Chong, T.C. (2003). Femtosecond laser-induced crystallization in as-deposited Ge 1Sb 2Te 4 films. Materials Research Society Symposium - Proceedings 803 : 239-244. ScholarBank@NUS Repository.
Abstract: Time resolved imaging has been used to investigate the whole process of the crystallization induced by intense 130 femtosecond laser pulses in as-deposited Ge 1Sb 2Te 4 films. With an average fluence of 24mJ/cm 2, a transient non-equilibrium state of the excited material is formed within 1 picosecond. The results are consistent with an electronically induced non-thermal phase transition.
Source Title: Materials Research Society Symposium - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83738
ISSN: 02729172
Appears in Collections:Staff Publications

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