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https://scholarbank.nus.edu.sg/handle/10635/83738
| Title: | Femtosecond laser-induced crystallization in as-deposited Ge 1Sb 2Te 4 films | Authors: | Wang, Q.F. Shi, L.P. Huang, S.M. Miao, X.S. Wong, K.P. Chong, T.C. |
Issue Date: | 2003 | Citation: | Wang, Q.F.,Shi, L.P.,Huang, S.M.,Miao, X.S.,Wong, K.P.,Chong, T.C. (2003). Femtosecond laser-induced crystallization in as-deposited Ge 1Sb 2Te 4 films. Materials Research Society Symposium - Proceedings 803 : 239-244. ScholarBank@NUS Repository. | Abstract: | Time resolved imaging has been used to investigate the whole process of the crystallization induced by intense 130 femtosecond laser pulses in as-deposited Ge 1Sb 2Te 4 films. With an average fluence of 24mJ/cm 2, a transient non-equilibrium state of the excited material is formed within 1 picosecond. The results are consistent with an electronically induced non-thermal phase transition. | Source Title: | Materials Research Society Symposium - Proceedings | URI: | http://scholarbank.nus.edu.sg/handle/10635/83738 | ISSN: | 02729172 |
| Appears in Collections: | Staff Publications |
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