Fast high-κ AIN MONOS memory with large memory window and good retention

Please use this identifier to cite or link to this item: https://doi.org/10.1109/DRC.2005.1553074

Title:	Fast high-κ AIN MONOS memory with large memory window and good retention
Authors:	Lai, C.H. Huang, C.C. Chiang, K.C. Kao, H.L. Chen, W.J. Chin, A. Chi, C.C.
Issue Date:	2005
Citation:	Lai, C.H.,Huang, C.C.,Chiang, K.C.,Kao, H.L.,Chen, W.J.,Chin, A.,Chi, C.C. (2005). Fast high-κ AIN MONOS memory with large memory window and good retention. Device Research Conference - Conference Digest, DRC 2005 : 99-100. ScholarBank@NUS Repository. https://doi.org/10.1109/DRC.2005.1553074
Abstract:	We have obtained good non-volatile memory device integrity of fast 100μs program and 1ms erase time at ±13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85°C in the new IrO2-HfAlO-AIN-SiO2-Si MONOS device. © 2005 IEEE.
Source Title:	Device Research Conference - Conference Digest, DRC
URI:	http://scholarbank.nus.edu.sg/handle/10635/83732
ISBN:	0780390407
ISSN:	15483770
DOI:	10.1109/DRC.2005.1553074
Appears in Collections:	Staff Publications

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