Please use this identifier to cite or link to this item: https://doi.org/10.1109/DRC.2005.1553074
Title: Fast high-κ AIN MONOS memory with large memory window and good retention
Authors: Lai, C.H.
Huang, C.C.
Chiang, K.C.
Kao, H.L.
Chen, W.J.
Chin, A. 
Chi, C.C.
Issue Date: 2005
Source: Lai, C.H.,Huang, C.C.,Chiang, K.C.,Kao, H.L.,Chen, W.J.,Chin, A.,Chi, C.C. (2005). Fast high-κ AIN MONOS memory with large memory window and good retention. Device Research Conference - Conference Digest, DRC 2005 : 99-100. ScholarBank@NUS Repository. https://doi.org/10.1109/DRC.2005.1553074
Abstract: We have obtained good non-volatile memory device integrity of fast 100μs program and 1ms erase time at ±13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85°C in the new IrO2-HfAlO-AIN-SiO2-Si MONOS device. © 2005 IEEE.
Source Title: Device Research Conference - Conference Digest, DRC
URI: http://scholarbank.nus.edu.sg/handle/10635/83732
ISBN: 0780390407
ISSN: 15483770
DOI: 10.1109/DRC.2005.1553074
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