Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICs

Abstract

It is demonstrated for the first time that voltage linearity coefficients (VCC) of metal-insulator-metal (MIM) capacitors can be engineered and virtually zero VCC can be achieved by using stacked insulator structure of high-K and SiO 2 dielectrics. Capacitance density of 6 fF/μm 2 and VCC of 14 ppm/V 2 achieved in this work are the best ever reported. The HfO 2/SiO 2 stacked MIM shows excellent performance in other parameters as well, such as low leakage current, low TCC, and stable frequency dependence.