Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)

Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2012.6210150

Title:	Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)
Authors:	Subramanian, S. Ivana Yeo, Y.-C.
Issue Date:	2012
Citation:	Subramanian, S.,Ivana,Yeo, Y.-C. (2012). Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET). International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210150
Abstract:	We report a novel n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET) comprising an embedded Metal Source/Drain (eMSD) formed in a quasi-insulating InAlAs region. The InAlAs barrier layer reduces off-state leakage current I OFF significantly. The eMSD consists of conductive Ni-InGaAs and Ni-InAlAs layers, and has a low sheet resistance R sh of ∼20 Ω/square. This achieves a significant reduction in the parasitic S/D resistance R sd, as compared with a conventional UTB-FET with thin S/D. © 2012 IEEE.
Source Title:	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI:	http://scholarbank.nus.edu.sg/handle/10635/83692
ISBN:	9781457720840
ISSN:	19308868
DOI:	10.1109/VLSI-TSA.2012.6210150
Appears in Collections:	Staff Publications

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