Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2012.6210150
Title: Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)
Authors: Subramanian, S.
Ivana
Yeo, Y.-C. 
Issue Date: 2012
Source: Subramanian, S.,Ivana,Yeo, Y.-C. (2012). Embedded Metal Source/Drain (eMSD) for series resistance reduction in In 0.53Ga 0.47As N-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET). International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210150
Abstract: We report a novel n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET) comprising an embedded Metal Source/Drain (eMSD) formed in a quasi-insulating InAlAs region. The InAlAs barrier layer reduces off-state leakage current I OFF significantly. The eMSD consists of conductive Ni-InGaAs and Ni-InAlAs layers, and has a low sheet resistance R sh of ∼20 Ω/square. This achieves a significant reduction in the parasitic S/D resistance R sd, as compared with a conventional UTB-FET with thin S/D. © 2012 IEEE.
Source Title: International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83692
ISBN: 9781457720840
ISSN: 19308868
DOI: 10.1109/VLSI-TSA.2012.6210150
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