Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric

Please use this identifier to cite or link to this item: https://doi.org/10.1109/.2005.1469207

Title:	Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric
Authors:	Park, C.S. Cho, B.J. Hwang, W.S. Loh, W.Y. Tang, L.J. Kwong, D.-L.
Issue Date:	2005
Citation:	Park, C.S.,Cho, B.J.,Hwang, W.S.,Loh, W.Y.,Tang, L.J.,Kwong, D.-L. (2005). Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 48-49. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469207
Abstract:	Dual metal gate integration scheme of using substituted Al (SA) and Pt xSi with high Pt concentration on high-K dielectric is proposed. The process can achieve a wide range of work function difference (0.65 eV) and is almost free from Fermi level pinning, without adverse effects of polysilicon pre-doping.
Source Title:	Digest of Technical Papers - Symposium on VLSI Technology
URI:	http://scholarbank.nus.edu.sg/handle/10635/83651
ISSN:	07431562
DOI:	10.1109/.2005.1469207
Appears in Collections:	Staff Publications

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