Please use this identifier to cite or link to this item:
|Title:||Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric|
|Authors:||Park, C.S. |
|Citation:||Park, C.S.,Cho, B.J.,Hwang, W.S.,Loh, W.Y.,Tang, L.J.,Kwong, D.-L. (2005). Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 48-49. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469207|
|Abstract:||Dual metal gate integration scheme of using substituted Al (SA) and Pt xSi with high Pt concentration on high-K dielectric is proposed. The process can achieve a wide range of work function difference (0.65 eV) and is almost free from Fermi level pinning, without adverse effects of polysilicon pre-doping.|
|Source Title:||Digest of Technical Papers - Symposium on VLSI Technology|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 12, 2019
checked on Oct 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.