Please use this identifier to cite or link to this item: https://doi.org/10.1109/PGC.2010.5706006
Title: Dry etching of LiNbO3 using inductively coupled Plasma
Authors: Deng, J.
Si, G.
Danner, A.J. 
Issue Date: 2010
Citation: Deng, J.,Si, G.,Danner, A.J. (2010). Dry etching of LiNbO3 using inductively coupled Plasma. 2010 Photonics Global Conference, PGC 2010 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/PGC.2010.5706006
Abstract: In this letter, we report ridge waveguides fabricated on X-cut proton exchange (PE)-LiNbO3 using inductively coupled plasma (ICP) etching techniques. Various etching masks and fluorine gases are investigated. Smooth etched surfaces are obtained by using Cr as a mask combined with SF 6/Ar etching gases. A high etch rate of 97.5 nm/min is achieved by using CHF3/Ar gases. Ridge waveguides with approximately 600nm depth, smooth surfaces and nearly vertical sidewalls are successfully fabricated using optimized etching conditions.
Source Title: 2010 Photonics Global Conference, PGC 2010
URI: http://scholarbank.nus.edu.sg/handle/10635/83650
ISBN: 9781424498826
DOI: 10.1109/PGC.2010.5706006
Appears in Collections:Staff Publications

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