Please use this identifier to cite or link to this item:
|Title:||Dry etching of LiNbO3 using inductively coupled Plasma|
|Source:||Deng, J.,Si, G.,Danner, A.J. (2010). Dry etching of LiNbO3 using inductively coupled Plasma. 2010 Photonics Global Conference, PGC 2010 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/PGC.2010.5706006|
|Abstract:||In this letter, we report ridge waveguides fabricated on X-cut proton exchange (PE)-LiNbO3 using inductively coupled plasma (ICP) etching techniques. Various etching masks and fluorine gases are investigated. Smooth etched surfaces are obtained by using Cr as a mask combined with SF 6/Ar etching gases. A high etch rate of 97.5 nm/min is achieved by using CHF3/Ar gases. Ridge waveguides with approximately 600nm depth, smooth surfaces and nearly vertical sidewalls are successfully fabricated using optimized etching conditions.|
|Source Title:||2010 Photonics Global Conference, PGC 2010|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 8, 2018
checked on Mar 10, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.