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|Title:||Doping of Al-catalyzed vapor-liquid-solid grown Si nanowires|
|Authors:||Whang, S.J. |
|Citation:||Whang, S.J.,Lee, S.J.,Yang, W.F.,Zhu, H.C.,Gu, H.L.,Cho, B.J.,Liew, Y.F. (2007). Doping of Al-catalyzed vapor-liquid-solid grown Si nanowires. Materials Research Society Symposium Proceedings 1018 : 66-71. ScholarBank@NUS Repository.|
|Abstract:||We successfully synthesized high quality single crystal Si nanowires using Al catalyst via vapor-liquid-solid (VLS) mechanism, having diameters ranging from 10 to 200 nm with 10-20 (Jin of length. Characterization of physical and chemical properties of Al-catalyzed Si nanowires using transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) analysis showed that single crystal Si nanowires can be grown with Al-catalyst at 540 °C and selective etching of Al existing at the tip of nanowire can provide metal-free Si nanowires that are compatible with conventional Si-based IC process. By using plasma doping method, it was confirmed that the doping level can be controlled and the boron was successfully introduced on Si substrate with 3x1022/cm3 of peak doping concentration. © 2007 Materials Research Society.|
|Source Title:||Materials Research Society Symposium Proceedings|
|Appears in Collections:||Staff Publications|
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