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|Title:||Cubic structured HfLaO dielectrics for MIM capacitor for RF IC applications|
|Citation:||Zhang, L.,He, W.,Chan, D.S.H.,Cho, B.J. (2009). Cubic structured HfLaO dielectrics for MIM capacitor for RF IC applications. ECS Transactions 19 (2) : 615-623. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3122120|
|Abstract:||Metal-Insulator-Metal (MIM) capacitors with various thickness as (22 nm, 30 nm, 37 nm and 44 nm) of La (8%) doped HfO2 deposited using atomic layer deposition were fabricated. A high dielectric constant value of 38 can be obtained when 8% La doped HfO2 is crystallized into cubic structure. While amorphous HfLaO demonstrates a quadratic voltage linearity|
|Source Title:||ECS Transactions|
|Appears in Collections:||Staff Publications|
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