Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3122120
Title: Cubic structured HfLaO dielectrics for MIM capacitor for RF IC applications
Authors: Zhang, L.
He, W. 
Chan, D.S.H. 
Cho, B.J.
Issue Date: 2009
Citation: Zhang, L.,He, W.,Chan, D.S.H.,Cho, B.J. (2009). Cubic structured HfLaO dielectrics for MIM capacitor for RF IC applications. ECS Transactions 19 (2) : 615-623. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3122120
Abstract: Metal-Insulator-Metal (MIM) capacitors with various thickness as (22 nm, 30 nm, 37 nm and 44 nm) of La (8%) doped HfO2 deposited using atomic layer deposition were fabricated. A high dielectric constant value of 38 can be obtained when 8% La doped HfO2 is crystallized into cubic structure. While amorphous HfLaO demonstrates a quadratic voltage linearity
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/83597
ISBN: 9781566777100
ISSN: 19385862
DOI: 10.1149/1.3122120
Appears in Collections:Staff Publications

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