Please use this identifier to cite or link to this item:
https://doi.org/10.1149/1.3122120
| Title: | Cubic structured HfLaO dielectrics for MIM capacitor for RF IC applications | Authors: | Zhang, L. He, W. Chan, D.S.H. Cho, B.J. |
Issue Date: | 2009 | Citation: | Zhang, L.,He, W.,Chan, D.S.H.,Cho, B.J. (2009). Cubic structured HfLaO dielectrics for MIM capacitor for RF IC applications. ECS Transactions 19 (2) : 615-623. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3122120 | Abstract: | Metal-Insulator-Metal (MIM) capacitors with various thickness as (22 nm, 30 nm, 37 nm and 44 nm) of La (8%) doped HfO2 deposited using atomic layer deposition were fabricated. A high dielectric constant value of 38 can be obtained when 8% La doped HfO2 is crystallized into cubic structure. While amorphous HfLaO demonstrates a quadratic voltage linearity | Source Title: | ECS Transactions | URI: | http://scholarbank.nus.edu.sg/handle/10635/83597 | ISBN: | 9781566777100 | ISSN: | 19385862 | DOI: | 10.1149/1.3122120 |
| Appears in Collections: | Staff Publications |
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